The following paper has been accepted for publication in IEEE Transactions on Device and Materials Reliability.
Shufan Xu, Kunyang Liu, Kiichi Niitsu and Hirofumi Shinohara, “Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function,” IEEE Transactions on Device and Materials Reliability, doi: 10.1109/TDMR.2025.3574796.