The following paper has been accepted for publication in IEEE Transactions on Electron Devices. This research is the result of a collaborative study with Kyoto Institute of Technology.
- M. Shintani, K. Oishi, Y. Nishitani, H. Takayama, and T. Sato, “Comprehensive MOSFET capacitance characterization based on charge trajectories,” IEEE Transactions on Electron Devices, Vol.72, No.7, doi: 10.1109/TED.2025.3572874
