The following paper has been accepted for publication in the IEEE Transactions on Nuclear Science. This study is a collaborative research effort involving Kyushu University, National Institute of Advanced Industrial Science and Technology, Kochi University of Technology, Japan Atomic Energy Agency, and High Energy Accelerator Research Organization.
Y. Deng, Y. Watanabe, S. Manabe, W. Liao, M. Hashimoto, S. Abe, M. Tampo, and Y. Miyake, “Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs,” in IEEE Transactions on Nuclear Science, doi: 10.1109/TNS.2024.3378216 in press.
