The following paper has been accepted for the International Symposium on Reliability Physics (IRPS) in Dallas, USA, in April 2024.
K. Takeuchi, T. Kato, and M. Hashimoto, “An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMs,” Proceedings of International Symposium on Reliability Physics (IRPS), to appear.
